bc847at /bc847bt /BC847CT npn plastic encapsulate transistor elektronische bauelemente 06-jan-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? ideally suited for automatic insertion ? for switching and af amplifier applications marking product marking code bc847at 1e bc847bt 1f BC847CT 1g package information package mpq leadersize sot-523 3k 7? inch absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 6 v collector current - continuous i c 0.1 a collector power dissipation p c 150 mw junction, storage temperature t j , t stg 150, -55 ~ 150 ? base ? emitter ? collector sot-523 ref. millimete r ref. millimete r min. max. min. max. a 1.5 1.7 g - 0.1 b 1.45 1.75 h 0.55 ref. c 0.75 0.85 j 0.1 0.2 d 0.7 0.9 k - e 0.9 1.1 l 0.5 typ. f 0.15 0.25 m 0.25 0.325 top view a l m c b d g h j f k e 1 2 3 1 2 3
bc847at /bc847bt /BC847CT npn plastic encapsulate transistor elektronische bauelemente 06-jan-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics ( t a = 25 c unless otherwise specified ) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v cbo 50 - - v i c = 10 a, i e = 0 collector to emitter breakdown voltage v ceo 45 - - v i c = 10 ma, i b = 0 emitter to base breakdown voltage v ebo 6 - - v i e = 1 a, i c = 0 collector cutoff current i cbo - - 15 na v cb = 30 v collector to emitter saturation voltage v ce(sat) - - 0.25 v i c = 10ma, i b = 0.5 ma - - 0.6 i c = 100ma, i b = 5 ma base to emitter saturation voltage v be(sat) - 0.7 - v i c = 10ma, i b = 0.5 ma - 0.9 - i c = 100ma, i b = 5 ma base to emitter voltage v be(on) 580 660 700 mv v ce = 5 v, i c = 2 ma - - 770 v ce = 5 v, i c = 10 ma dc current gain bc847at h fe 110 - 220 v ce = 5 v, i c = 2 ma bc847bt 200 - 450 BC847CT 420 - 800 transition frequency f t 100 - - mhz v ce = 5 v, i c = 10 ma f = 100mhz collector output capacitance c ob - - 4.5 pf v cb = 10 v, f=1mhz noise figure bc847bt nf - - 10 db v ce = 5v, bw= 200hz, f= 1khz, r s = 2 k ? BC847CT - - 4
bc847at /bc847bt /BC847CT npn plastic encapsulate transistor elektronische bauelemente 06-jan-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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